About Us-元旭半导体科技股份有限公司

About INNOSHINE

In the field of Micro-LED displays in China
Technological leading enterprises

Brand Story About INNOSHINE Enterprise Architecture Corporate Strategy Core Team Development History Honors and Qualifications

Brand Story

Originating from National Key Laboratories
A Pinnacle of Innovation in Integrated Optoelectronics

In 1987, the National Planning Commission approved the establishment of the National Key Joint Laboratory of Integrated Optoelectronics. The Tsinghua University Integrated Optoelectronics Laboratory was founded, becoming a key platform in China’s information optoelectronics sector. The current laboratory director is Academician Luo Yi, a leading academic figure with extensive achievements in high-speed broadband optoelectronic devices, GaN-based LEDs, and semiconductor lighting technologies, contributing significantly to China’s information optoelectronics research and industrial development.

Academician-Led + Doctoral Team
Pioneered China’s First Third-Generation Semiconductor GaN Material Test Line

In early 1999, Academician Luo Yi, together with Dr. Guo Wenping, independently established China’s first third-generation semiconductor GaN material test line, laying the foundation for R&D of third-generation semiconductor materials, processes, and device design, and creating preconditions for the localization of next-generation LED lighting.

Micro-LED Technology Theory Proposed for the First Time
Redefining the Next Generation of Display Technology

In 2000, the Micro-LED technology theory was proposed for the first time, marking the entry of LED light sources into the micro-display era. Since 2012, multiple international companies have entered the Micro-LED display field, jointly tackling upstream mass transfer, full-color implementation, and inspection and repair bottlenecks across the industry chain. China has actively followed, focusing on the development of key technologies such as mass transfer and color consistency under the guidance of industry experts.

Tsinghua Team Founded INNOSHINE Semiconductor
Breaking Through Domestic Semiconductor Challenges

Faced with China’s “chip shortage and display scarcity” dilemma, Xi Guangyi and Dr. Guo Wenping co-founded INNOSHINE Semiconductor in 2014. The company focuses on third-generation semiconductor substrates, chips, new displays, and visual solutions, tackling key “bottleneck” semiconductor technologies, with the goal of becoming a globally leading third-generation semiconductor optoelectronic chip innovation enterprise.

About INNOSHINE

INNOSHINE Semiconductor Technology Co., Ltd. (hereinafter: INNOSHINE Semiconductor) was established in 2014 and is a leading technology company in China’s Micro-LED display field, specializing in R&D and industrialization innovation of Micro-LED chip technology and next-generation smart display products.

INNOSHINE Semiconductor, with self-developed Micro-LED display chips and advanced integrated packaging technology as its core engine, pursues the vision of “bringing Micro-LED display products into households,” building full-chain smart manufacturing capabilities from Micro-LED display chips, advanced integrated packaging, to next-generation smart display products, creating a vertically integrated industrial loop and enabling one-stop industrialization from chip to display terminal.

Leveraging deep integration capabilities “from chip to screen,” INNOSHINE Semiconductor continuously promotes the commercialization of Micro-LED technology in high-end display terminals, achieving leapfrog competitive advantages in cost control and product performance, and providing high cost-performance solutions in the smart display field, aiming to become the global leader in next-generation display technology.

R&D headcount

300

team size

100

number of patents

Enterprise Architecture

Corporate Strategy

One Core, Two Wings, Three Chains Collaborative Model

Based on the strategic pivot of “From Chip to Screen, Vertical Integration,” INNOSHINE Semiconductor serves global display brand customers through the IDM integrated manufacturing model, aiming to build a multi-billion-yuan semiconductor display leader.

Through an independent innovation R&D model, INNOSHINE Semiconductor has successfully overcome core technological barriers to Micro-LED industrialization—including chip structure design, chip thin-film technology, mass transfer, RDL (Redistribution Layer) advanced packaging, and other key areas—and pioneered the MOG (Micro-LED on Glass) technology system in China, achieving efficient coordination between chip and display packaging technologies and accelerating core technology iteration and product implementation.

INNOSHINE Semiconductor actively participates in and leads the formulation of Micro-LED display-related technical standards, manufacturing standards, and application standards, securing the technological and industrial high ground. Through strategic investment, industrial alliances, and patent deployment, the company continuously strengthens control and synergy across the “capital chain, industrial chain, and standards chain.”

Core Team

Originating from Tsinghua University · Integrated Optoelectronics
Academician Luo Yi’s National Key Laboratory Team

The founding team of INNOSHINE Semiconductor originates from Academician Luo Yi’s team at Tsinghua University’s National Key Laboratory of Integrated Optoelectronics, representing one of China’s earliest semiconductor expert teams engaged in research on third-generation semiconductor materials and semiconductor optoelectronic devices.

INNOSHINE Semiconductor Smart Manufacturing System

Core
R&D

Personnel

20%

Bachelor's degree

Personnel

85%

Dr. Xi Guangyi

Department of Electronic Engineering, Tsinghua University

Chairman of the Board and Chief Executive Officer (CEO) of INNOSHINE Semiconductor

Fully responsible for company strategy, capital operations, and overall management.

Holds a Ph.D. in Engineering from Tsinghua University, mentored by Academician Luo Yi.

Dr. Xi Guangyi is one of China’s earliest research experts in GaN-based LEDs, HEMT materials, and devices. He has participated in major national science projects and published over ten core academic papers, driving the industrial upgrade of LED optoelectronic chips and advanced devices anchored in technology.

Awards include 2022 Yuandu Financial Talent, 2022 Weifang High-Tech Zone Specialized and Innovative High-Growth Entrepreneur, and 2023 First Bincheng Talent Innovation and Entrepreneurship Competition – Leading Talent in Scientific and Technological Innovation.

Dr. Guo Wenping

Department of Electronic Engineering, Tsinghua University

Co-Founder
Chief Technology Officer (CTO)

Co-founder and CTO of INNOSHINE Semiconductor, Dr. Guo Wenping oversees the company’s cutting-edge technology strategy and R&D system development, focusing on solving key technological bottlenecks in Micro-LED chip industrialization and efficiently translating innovation into market-ready products.

Dr. Guo graduated from Tsinghua University’s Department of Electronic Engineering, under Academician Luo Yi, a pioneer in China’s semiconductor optoelectronics, earning his Ph.D. in Engineering. Dr. Guo has nearly two decades of experience in compound semiconductors, previously holding key positions including Technology Director at Dalian Meiming, Technical Director and Vice General Manager at Jiangsu Xinguanglian, and Director of the Research Institute, combining top academic insight with large-scale enterprise R&D management experience. He has developed unique methodologies in full-chain industrialization of optoelectronic chips.

With keen insight into optoelectronic technology evolution and cross-domain resource integration, Dr. Guo continues to lead INNOSHINE Semiconductor in building a high-level technological moat, providing foundational support for the next-generation display industry and advancing China’s global leadership in next-generation display technologies.

Development History

Laying the foundation and setting sail

2014-2016

Company establishment:

In 2014, INNOSHINE was registered and established.

Foundation laying of the base:

INNOSHINE lays the foundation for its Weifang production base.

Strategic Focus:

Using innovative technology as the engine, anchor the golden track of third-generation semiconductors.

Governance upgrade:

Complete the reform of the shareholding system and build a modern corporate governance system.

Innovation drives growth

2017-2020

Capital boost:

Successfully completed Series A/B financing and increased investment in research and market development.

technology iteration:

The upgrade of the new graphic sapphire substrate (PSS) technology continues to lead the market share.

Mass production breakthrough:

The first domestic company to achieve large-scale production of nano PSS.

customer expansion:

The product has successfully entered the global mainstream extended customer supply chain and become a core strategic supplier.

leapfrog development:

Awarded multiple honors such as the national level "Specialized, Refined, Unique and New" Little Giant and "Gazelle Enterprise".

Strategic deepening and expansion

2021-2024

R&D breakthrough:

The Wuxi R&D center has been completed, developing Micro LED chips and advanced COB packaging technology.

Intelligent Manufacturing Base:

Spending 1 billion yuan to build an integrated research and development center and high-end intelligent manufacturing base in Tianjin.

Capital deepening:

Complete Series C financing, deepen research and development depth and market coverage.

Business Layout:

Strategic layout MLED display expands the business map of new LED display products.

vertical integration:

We will make every effort to build a "third-generation semiconductor IDM2.0 integrated design and manufacturing innovation platform", reshape the industrial value chain, successfully develop new integrated display technologies, and achieve industrial breakthroughs.

Technological leadership and scale leap

2025-2030

Commercialization acceleration:

The new display technology is accelerating its penetration into the consumer electronics market and entering a period of explosive growth.

Intelligent Manufacturing Milestones:

The Tianjin Super Intelligent Manufacturing Factory has officially started production, ushering in a new era of large-scale intelligent manufacturing.

disruptive technology:

The world's first MOG glass based pixel level integrated packaging technology breaks through the bottleneck of ultra-high resolution.

Cost Icebreaker War:

By leveraging MOG's technological leadership, cost advantages, and the vertically integrated manufacturing capabilities of Tianjin Super Factory, we have achieved a significant reduction in the production cost of Micro LEDs, clearing key obstacles for our products to enter the home market.

Capacity Enhancement Plan:

By the end of 2025, the production capacity will reach 3000m2/month; The production capacity of Phase II in 2027 will soar to 20000 square meters per month.

Leading the industry benchmark:

With its first tier production schedule, ultimate cost advantage, and top-notch MOG technology, INNOSHINE defines a new benchmark for semiconductor display development and promotes the large-scale application of Micro LED technology in the home display field.

Honors and Qualifications

Leveraging a comprehensive Intellectual Property Management System certification, INNOSHINE Semiconductor has successfully established a full-technology-chain IP protection ecosystem, continuously stimulating innovation and reinforcing core competitive barriers.

To date, INNOSHINE Semiconductor holds over 100 independent intellectual property rights, including: 75 utility model patents, 42 invention patents, and 2 PCT international patents. In cutting-edge areas such as Micro-LED display chip architecture, miniaturized thin-film chip design, mass transfer processes, nanoscale precision wiring, and multi-dimensional integrated packaging, INNOSHINE Semiconductor occupies the technological high ground, forming an innovation framework and IP matrix capable of defining industry standards.

Utility model patent

invention patent

PCT International Patent

With strong technical capabilities and sustainable competitiveness, INNOSHINE Semiconductor ranks among China’s top high-tech enterprises, receiving continuous recognition from national innovation systems: awarded national-level “Specialized, Refined, Distinctive, and Innovative Small Giant” enterprise, “Gazelle Enterprise,” and municipal-level “Hidden Champion,” and approved for the establishment of a municipal enterprise technology center leveraging its leading R&D capabilities.

INNOSHINE Semiconductor has built a quality and responsibility system fully aligned with international standards, being the first to achieve ISO9001 Quality Management System and ISO14001 Environmental Management System certifications, establishing full lifecycle quality assurance; simultaneously receiving dual certifications for Standardized Safety Production and Product After-Sales Service System. As a strategic core partner for domestic and international medium-to-large display brands, INNOSHINE Semiconductor has earned deep trust from top-tier global customers through its solid technological moat and reliable delivery capabilities.